张佳林(1995.08-),博士,讲师,硕士生导师
教育和工作经历:
2023.10-至今, 海南大学 电子科学与技术学院 讲师(硕导)
2019.9-2023.7,郑州大学 粒子物理与原子核物理 博士
2017.9-2019.6,郑州大学 凝聚态物理 硕士
2013.9-2017.6,上海电力学院 应用物理学 学士
研究方向:
电子器件(辐射)可靠性、
电子器件物理仿真、
半导体缺陷表征调控、
半导体缺陷第一性原理计算
科研项目:
1. 海南大学科研启动基金项目,InP基HEMTs重离子辐照损伤机制及模型研究,2023.10-2028.10(主持)
2. 海南省高等学校科学研究项目(自然科学类),毫米波InP HBTs器件粒子辐照的物理仿真模型研究,2024.1-2026.12(主持)
代表性论文:
1.J. Zhang, B. Mei, Y. Su, F. Yang, Z. Jin, and Y. Zhong*, "Influence of BCB Protection on Irradiation Response of InP-Based HEMTs: A Comparative Study," IEEE Transactions on Electron Devices, vol. 70, no. 8, pp. 4225-4230, 2023.
2.J.-L. Zhang, P. Ding, B. Mei, S.-H. Meng, C. Zhang, L.-H. Ma, Z. Jin, Y. Sun, H.-M. Zhang, and Y.-H. Zhong*, "The effects and mechanisms of 2 MeV proton irradiation on InP-based high electron mobility transistors," Applied Physics Letters, vol. 120, no. 10, p. 103501, 2022.
3.J. Zhang, P. Ding, Y. Jin, S. Meng, X. Zhao, Y. Hu, Y. Zhong* and Z. Jin, "A comparative study on radiation reliability of composite channel InP high electron mobility transistors," Chinese Physics B, vol. 30, no. 7, p. 070702, 2021.
4. YuXin Fang#,JialinZhang#, Yongbo Su#, Zhi Jin, Yinghui Zhong, “Intrinsic point defects investigation in InAlAs with extrapolated defect transition level,” Microelectronics Journal, vol. 147, p. 106168, 2024.
5. B. Yang#,J. Zhang#, P. Ding, S. Sun, Y. Jin, X. Zhao, S. Meng, Y. Hu, Y. Zhong* and Z. Jin, "PKA distributions in InAlAs and InGaAs materials irradiated by protons with different energies," Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, vol. 484, pp. 42-47, 2020.